- 您现在的位置：买卖IC网 > Sheet目录131 > DSEP60-025A (IXYS)DIODE FRED 250V 60A TO-247AD
                 ? 2002 IXYS All rights reserved 1 - 1 HiPerFREDTM Epitaxial Diode with soft recovery Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ①TVJ = 25°C; V R = V RRM 650 μA TVJ = 150°C;V R = V RRM 2.5 mA ②IF = 60 A; T VJ = 150°C 1.07 V Advantages TVJ = 25°C 1.31 V Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 μ s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. A = Anode, C = Cathode, TAB = Cathode TO-247 AD C A C (TAB) C A IFAV VRRM =250 V trr = 30 ns = 60 A DSEP 60-025A VRSM VRRM Type V V 250 250 DSEP 60-025A 237 Symbol Conditions Maximum Ratings IFRMS IFAVM 70 A TC = 120°C; rectangular, d = 0.5 60 A IFSM TVJ = 45°C; t p = 10 ms (50 Hz), sine 600 A EAS TVJ = 25°C; non-repetitive 1.6 mJ IAS = 3.5 A; L = 180 μH IAR VA = 1.5 ·VR typ.; f = 10 kHz; repetitive 0.4 A TVJ TVJM Tstg -55...+175 °C 175 °C -55...+150 °C Ptot TC = 25°C 230 W Md mounting torque 0.8...1.2 Nm Weight typical 6 g Symbol Conditions Characteristic Values typ. max. IR VF RthJC RthCH 0.65 K/W 0.25 K/W trr IF = 1 A; -di/dt = 300 A/μs; 30 ns VR = 30 V; T VJ = 25°C IRM VR = 100 V; I F = 130 A; -di F/dt = 100 A/μs 5 6 A TVJ = 100°C Preliminary data sheet |